摘要
将经过多级提纯、垂直无籽晶气相输运法生长的CdSe晶锭切割,获得沿生长轴向分布的1.3mm厚晶片系列,采用日本SH IMAZU公司的IRpresting-21傅立叶变换红外光谱仪、ZC36型高阻仪及X射线能谱仪对该晶片组的红外透过率、电阻率、成份百分含量进行了测试,依据晶片对红外光的吸收机理,讨论了CdSe晶片在中红外区域透过率的理论值和影响其红外透过率的主要因素,研究了红外透过率与晶片性能的内在联系,为探测器级CdSe晶片的筛选提供了一种简便有效的方法。
Cutting the CdSe crystal grown by multi-step purification and vertical vapor phase transmission method, a series of 1. 3mm thick wafers distributed along the growth axes were obtained. The IR transmittance, resistivity and component content of this group wafers were measured with SHIMAZU eter, ZC36 megger and EDS. Based on the IR absorbing mechanism, CdSe crystal＇s transmittance in theory and the main factors that affect its transmittance was discussed. The inner relationship between IR spectrum and the wafers＇ quality was analyzed. An effective way for choosing CdSe wafers of detector level was provided.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第6期1211-1214,共4页
Journal of Synthetic Crystals
基金
国家863计划(No.2202AA325030)
