摘要
系统分析了国外单粒子翻转率预估方法，提出了一种适合国内现状的单粒子翻转率预估方法，计算了五个典型轨道上的单粒子翻转率和轨道翻转率系数，为评价半导体器件抗单粒子效应的能力提供了依据．
The methods for predicting Single Event Upset (SEU) rate abroad were analyzed. A method was proposed suitable for domestic status for predicting SEU rate. SEU rates and orbit specific rate coefficients were calculated in five typical orbits, and a tool is provided to assess the ability of semiconductor devices against SEU.
出处
《空间科学学报》
CAS
CSCD
北大核心
2001年第3期266-273,共8页
Chinese Journal of Space Science
