摘要
在实验研究的基础上,分析了应用锎源实验结果预估空间轨道单粒子翻转率的可行性。以静态存储器的锎源单粒子翻转截面为例,分3种情况预估了该器件在地球同步轨道上的单粒子翻转率。结果表明,若器件的锎源单粒子翻转截面小于10-10cm2/bit,在地球同步轨道上的单粒子翻转率则应小于10-8d-1.bit-1。
Feasibility of prediction for single event upset rate based on ^252Cf experimental results in space orbits was analyzed. Taking static random access memory as an example, its single event upset （SEU） rates in geostationary orbit were predicted under three circumstances based on its ^252Cf SEU cross sections. The result shows that SEU rate in geostationary orbit should be smaller than 10-8d^-1·bit^-1 , if ^252Cf SEU cross section is smaller than 10^-10 cm^2/bit.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2009年第11期1029-1033,共5页
Atomic Energy Science and Technology
关键词
锎源
单粒子翻转率
半导体器件
^252 Cf source
single event upset rate
semiconductor device
