摘要
利用解析法计算了高能重离子的径迹结构，通过 Ｍｏｎｔｅ Ｃａｒｌｏ方法研究了径迹结构对 微电子芯片单粒子翻转的影响．结果表明，考虑了径迹结构的影响后，当离子能量较高时， 具有小尺寸灵敏单元、低翻转阈值的芯片的翻转截面较传统的ＬＥＴ描述结果小许多；当离子 更重时，这种差别对灵敏单元尺寸较大、翻转阈值较高的芯片也变得较明显．即离子径迹结 构的影响是通过其有效地沉积到灵敏单元中的能量与翻转阈值相比较而表现出来的．还研究 了作用距离较深、结构宽大的径迹造成的相邻多个灵敏单元的同时翻转，即多位翻转现象， 这是用ＬＥＴ所不能反映的．
The track structure of high-energy heavy ions was calculated in this paper and using Monte Carlo method, effects of the track structure on single event upset was studied. Taking into account the track structure, devices with small sensitive cell and low upset threshold show lower upset cross sections and upset rates, when compared with LET calculation. When ion becomes heavier, this decrease is remarkable even for devices with moderate dimension sensitive cell and higher upset threshold. In general, ion track shows effect when effective deposited energy is comparable with upset threshold. High-energy heavy ions can penetrate into thick material, in addition large dimensional track has chance to deposit enough energy in neighboring cells simultaneously. Both of these two cases can give rise to multiple-bit upsets. And this multiple-bit upsets effect can't be calculated with LET.
出处
《空间科学学报》
CAS
CSCD
北大核心
2000年第4期333-339,共7页
Chinese Journal of Space Science
关键词
高能重离子
径迹结构
单粒子翻转
微电子芯片
High-energy heavy ions, Track structure, Single event upset, Multiple-bit upsets
