摘要
利用自行编制的半导体器件一维模拟程序mP ND1D ,通过对二极管内部载流子所满足的非线性、耦合、刚性偏微分方程组进行数值求解 。
By means of our own one-dimensional code mPND1D for modeling of PN junction diode behavior,and by solving the nonlinear,coupling,stiff partial differential equations satisfied by the diode carriers mathematically,the energy absorbed and the time needed by a diode were calculated when it was stimulated by high-power microwave pulse,and became failure or burnout.
基金
国家 8 63激光技术领域资助课题
湖南省自然科学基金!项目 (0 0JJY2 0 0 9)
