摘要
考虑二极管内部载流子所满足的非线性、耦合、刚性方程组中可能考虑的因素 ,利用自行研制的半导体器件模拟程序 m PND1 D,对硅二极管在高功率微波激励下的非线性特性进行了数值计算 ,结果显示出硅二极管对微波信号响应的非线性。
By making use of our own program mPND1D , which is used to model the behavior of semiconductor device , we calculated the nonlinear response of the silicon diode stimulated by a high power microwave source. In the code, we considered factors in the set of coupled、nonlinear and stiff partial differential equations as many as we can. This set of equations for the electron and hole in a semiconductor is consisted of such eight equations as carrier continuity equations、Poisson equation、heat flow equation and so on.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2000年第3期324-326,共3页
High Power Laser and Particle Beams
基金
国家 8 63强辐射重点实验室资助! ( 99-0 2 )
湖南省高校科研青年项目!( 99-B17) -资助课题
