摘要
采用共溅射方法和Eu离子注入热生长的SiO2 方法得到SiO2 (Eu)薄膜 ,Eu离子的浓度为 4%和 0 .5 % .对样品X射线吸收近边结构 (XANES)的研究和分析表明 ,在高温氮气中发生了Eu3+向Eu2 +的转变 .SiO2 (Eu)
Eu ions doped SiO 2 thin films, SiO 2(Eu), were prepared by co\|sputtering of SiO 2 and Eu 2O 3 and Eu ion implantation into thermally grown SiO 2 films. The Eu\| L 3\|edge X\|ray absorption near edge structure (XANES) spectra of SiO 2(Eu) films show a doublet absorption peak structure with energy difference of 7?eV, which indicates the conversion of Eu 3+ to Eu 2+ at high annealing temperature in N 2. The strong blue luminescence of SiO 2(Eu) films prepared by ions implantation after films annealed above 1100?℃ confirms the above argument.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第3期532-535,共4页
Acta Physica Sinica
