摘要
研究了快速热生长二氧化硅MOS结构的负偏压温度不稳定性。这种MOS结构在未经受过金属化后热处理时有室温负偏压不稳定性,但热处理后,其负偏压温度不稳定性就比电阻炉中热生长二氧化硅MOS结构小。研究了快速热生长后在氩气中快速热处理的时间和温度、热生长后在氧气中的冷却方式、金属化后退火的温度对这种不稳定性的影响。金属化时的辐照不但引进正电荷和界面陷阱,也把负偏压温度不稳定性机构引进了MOS结构。另外还研究了负偏压温度应力后平带电压负向位移的时间演化过程,讨论了负偏压温度不稳定性的机制。
Negative bias-temperature instability in silicon dioxide films grown in a rapid thermalprocessor has been investigated.Rapid thermal oxide MOS structures were found to have alower negative bias-temperature instability than the furnace oxide MOS structures. The effectsof temperature and time during post oxidation annealing in argon, the cooling process afterrapid thermal oxidation and the temperature of post metallization annealing in forming gas onthe negative bias-temperature instability are studied.In addition, evolutions of the flat bandvoltage shift were measured on the rapid thermal oxide MOS structures under an negative biastemperaturestress. Based on these results, the mechanism of the negative bias-temperature instability is discussed.
基金
国家自然科学基金
关键词
SIO2
MOS结构
负偏压
热生长
温度
MOS structure
Negative bias-temperature instability
Rapid thermal oxidation
