摘要
利用离子注入技术将稀土Ｐｒ和Ｅｕ离子引入外延硅片中，经快速热退火（ＲＴＡ）使注入层再结晶和电激活。对Ｐｔ离子注入（剂量１×１０１４ｃｍ－２，３５０ｋｅＶ）样品，在较低温度９４０℃下退火，样品具有电子导电性，注入离子起施主作用，而在较高温度１２４０℃下退火，则具有空穴导电性，注入离子起受主作用，即有两种导电行为。对高剂量（２×１０１５ｃｍ－２，）Ｅｕ离子注入硅样品，经高温ＲＴＡ处理后，发现了明显的Ｒａｍａｎ增强效应。本文对以上两种现象给出了解释并进行了讨论。
Rare earth element Pr ion implanted silicon has two types of electrical behavior under different condition of Rapid Thermal Annealing (RTA). For Pr￣3+ implanted epitaxial silicon samples with dose 1×10￣(14) cm-2 and energy 350 keV, annealing at temperature 940℃, the sample has electron conductivity, implanted ion acts as a donor ; and at 1240℃, the sample has hole conductivity , implanted ion acts as an acceptor. For high does(2×10￣(15)cm-2) Eu￣3+ implanted epitaxial silicon sample , undergoing hight temporature RTA treatment, Raman enhanced effect was observed. In this paper, reasonable explanations for these two phenomena have been given.
出处
《中国稀土学报》
CAS
CSCD
北大核心
1996年第1期33-37,共5页
Journal of the Chinese Society of Rare Earths
基金
国家自然科学基金
关键词
离子注入
硅
快速热退火
喇曼增强
镨
铕
Pr￣(3+)
Eu￣(3+)
Rapid-thermal annealing
Implanted silicon
