摘要
对超大规模集成电路（ＵＬＳＩ）制备中二氧化硅介质的抛光机理、工艺条件选择、抛光液成分与作用等进行了综述，对抛光浆料及抛光工艺中存在的一些难题进行了分析，对如何提高抛光速率、改善表面状况以及解决金属离子沾污等问题进行了讨论．
The mechanism, the choosing of processing conditions and content and effect of polishing slurry of silica dielectric in ULSI multilevel are outlined. The present problems of slurry and CMP technique for SiO2 dielectric are analyzed. The way of increasing the polishing rate, improving of the surface condition and avoiding metallic ions is discussed.
出处
《河北工业大学学报》
CAS
2001年第3期32-36,共5页
Journal of Hebei University of Technology
