摘要
本文测量了半导体CdSe薄膜电极在脉冲激光下的瞬态光电压行为。在多硫溶液和铁氰溶液中分别观察了载流子受光分离,本体和表面复合以及空穴,电子的界面氧化还原引起的光电压变化的快过程和慢过程。应用数字模拟技术进行了理论分析。通过模拟界面氧化还原反应所得到的反应速度常数K_p、K_n,讨论了CdSe薄膜电极在不同溶液中界面电荷转移的动力学行为.
Photovoltage transient behaviors of CdSe thin films electrode have been measured by plused laser irradiation. Both fast and slow transients based on photogeneration, recombination and interfacial charge transfer were observed in polysulfide and ferro-ferricyanide solution. A digital simulation technique were applied for theoretical analysis. From the simulated parameters of interfacial redox reaction rate constant K_p and K_n , the Kinentic bahaviours of interfacial charge transfer of CdSe thin film electrode in different solution were discussed.
