摘要
用X射线光电子能谱(XPS)研究了不同含氧气氛中烧结的薄膜CdSe及Cdse_xTe_(1-x)电极表面,以及薄膜与Ti底基之间的界面。研究中发现,二种薄膜电极的表面形成了CdO,SeO_2及TeO_2氧化物,与薄膜接触的Ti底基表面上形成了TiO_2。用俄歇电子能谱(AES)对在电极表面及Ti表面所生成的氧化层分别进行了深度分析。结果表明,各种氧化物形成的程度有很大的不同,氧化层厚度也存在差异。对影响薄膜电极的光电性能的因素进行了讨论。
The surfaces of CdSe,CdeS,Te1-x thin film electrodes and the interfaces between thin films and Ti substrates were investigated after annealing in N2 atmosphere containing different content of O2 by X-ray Electron Spectroscopy.It was found that the oxides such as CdO,SeO2,TeO2 were formed on the surfaces of both thin films and TiO2 was formed on Ti substrate surfaces which contact with thin films.Auger Electron Spectroscopy were used for depth analysis.The results showed that there were differences in degree and in thickness for oxides formation.The influencing factors on photoelectr ochemical behaviour of the thin film electrodes were discussed.
出处
《感光科学与光化学》
CSCD
1990年第1期22-29,共8页
Photographic Science and Photochemistry
关键词
薄膜
电极
光电子能谱
CDSE
thin film electrodes,XPS,AES,surface analysis,photo-electric conversion
