摘要
在光电化学光能转换的研究中,由于多种因素在半导体/溶液界面形成了各种性质和作用不同的表面态,在界面的电荷和能量转移中起着重要作用,对光电转换性能产生较大的影响。对于多晶半导体——作为具有实用前景和目前深受重视的光电转换材料,由于存在较多的晶格缺陷和晶粒界面,在表面形成了浓度较高的表面态,这些表面态可作为光生电子空穴的复合中心,是造成多晶材料光电转换效率低于单晶材料的主要原因。因此测量和研究半导体/溶液界面的表面态能量分布,性质及作用对研究光电转换过程的机理,特别是对改善多晶半导体的性能都具有直接的重要意义。
The surface state behaviors incorporated into an equivalent circuit of CdSe thin film electrodes have been studied in K2SO4 and Fe(CN)63-/4- solution. Surface state capacitances and resistances were evaluated by analysis of the equivalent circuit impedance in numerical Laplace transformation. The surface state mapping were presented. The results of the similarity of the energies distribution of surface state in both solution indicated that the surface states were bascially associated with the surface nature of CdSe thin film electrodes.
出处
《感光科学与光化学》
CSCD
1991年第4期295-298,共4页
Photographic Science and Photochemistry
基金
国家自然科学基金
关键词
硒化镉
薄膜电极
阻抗
拉氏变换
surface state, CdSe thin film electrode, impedance analysis, Laplace transformation
