摘要
本文用能量为600eV、束流密度为0.5mA·cm^(-2)垂直入射的氩离子束对半导体单晶硅上不同宽度的沟槽(15μm、10μm、5μm)进行了不同时间的离子束蚀刻,发现在槽底靠近槽壁处出现了凹沟现象,建立了入射离子在斜壁上反射的理论模型,并通过计算机模拟和实验结果进行了比较。
In this paper,the energy of 600ev Artions with a current density of 0.5ma/cm^2at normal incidence is used to etch various width grooves(15μm,10μm,5μm)on the semi-conductor single crystal silicon wafer.It is observed that the dig-out is presented on the floor of grooves near the walls.A theoretical model of the reflectlon of incident ion beam from adjacent steep wall is constructed.The experimental results are compared with computer simulation.
出处
《表面技术》
EI
CAS
CSCD
1989年第5期43-46,共4页
Surface Technology
