摘要
介绍了一种应用电子浴辅助阴极电弧源法合成AlN薄膜的新方法 ,研究了N2 流量、阴极偏压、工作气压等工艺参数对合成AlN薄膜质量的影响规律。结果表明 ,随N2 流量的增加 ,AlN薄膜的质量得以提高 ,当N2 流量达到 30mL·min-1时 ,可合成较纯净的AlN薄膜 ;阴极偏压主要影响合成薄膜的结晶状况 ;此外 。
A new synthesizing aluminum nitride thin film method, which uses activated active ion plating with cathode arc source assisted by electrons bath, was introduced. The effect law of process parameters (including nitrogen flow rate, substrate bias potential, gas pressure etc.) on the quality of synthesized aluminum nitride was investigated. The results show that the quality of AlN thin films are improved with the increase of N 2 flow rate. When N 2 flow rate reaches to 30 mL·min -1 , comparatively pure AlN thin film is synthesized. The cathode bias potential mainly affects the crystallinity of the films. In addition, substrate material and its surface state also have some effects on the films. [
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2001年第2期240-243,共4页
The Chinese Journal of Nonferrous Metals
基金
山西青年基金资助项目! (9810 2 6 )
