摘要
介绍了半导体器件与电路的剂量率效应及其测试方法。主要分析了分立器件和集成电路的效应机理和建立的光电流测试系统及瞬时回避测试系统 ,给出了在晨光号加速器和
WT5”BZ]Measurements of transient effects of electronic devices and circuits are investigated Mechanisms of photocurrent in transistors are analyzed, and latch up and upset in CMOS circuits are studied Test on some types of transistors and CMOS circuits are carried out And some of the results are presented [WT5HZ]
出处
《微电子学》
CAS
CSCD
北大核心
2001年第2期130-134,共5页
Microelectronics
关键词
电子器件
剂量率效应
电子电路
电路测试
WT5”BZ]Electronic device
Radiation effect
Dose rate effect
Photocurrent
Instantaneous evading
