摘要
针对一款百万门级0.18μm互补金属氧化物半导体(0.18μm CMOS)工艺抗辐射加固的微处理器电路,提出了采用TCAD仿真建模技术对加固电路开展瞬时剂量率效应研究的方法,仿真结果表明通过保护环结构加固设计,可有效提升电路的抗瞬时剂量率效应性能,并利用瞬时剂量率辐射源进行了仿真有效性的试验验证。结果表明,采用TCAD仿真手段得到的瞬时光电流峰值与试验得到的光电流峰值误差小于5%,证实了仿真研究电路瞬时剂量率效应方法的有效性。
A TCAD simulation method is proposed to simulate the instantaneous dose rate effect of a radiation-hardened SRAM with a million gate level of 0.18μm CMOS technology.Simulation results show that the protection ring layout design can effectively improve the instantaneous dose rate effect performance of the circuit.Using the dose rate radiation source,the experiment verification of simulation effectiveness is carried out.Simulation and experiment results show that the error between the photocurrent peak obtained by TCAD simulation and the photocurrent peak obtained by experiment is less than 5%,which confirms the effectiveness of the simulation method for studying the instantaneous dose rate effect.
作者
初飞
陈洪转
于春青
郑宏超
王亮
杨程远
CHU Fei;CHEN Hong-zhuan;YU Chun-qing;ZHENG Hong-chao;WANG Liang;YANG Cheng-yuan(Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China;Beijing Microelectronics Technology Institute,Beijing 100076,China)
出处
《宇航计测技术》
CSCD
2022年第4期83-87,92,共6页
Journal of Astronautic Metrology and Measurement
关键词
辐射加固
TCAD仿真
剂量率
瞬时光电流
Radiation-hardening
TCAD simulation
Dose rate
Instantaneous photocurrent
