摘要
考察了在600℃以下通过反应AlCl3＋NH3→AlN＋3HCl制备AlN纳米锥的规律，结果表明在500℃时仍可获得AlN纳米锥，当温度为480℃时则无氮化物生成。场发射测试显示在500～600℃温区内制得的AIN纳米锥的开启电场处于14．2～20V·μm^-1范围，且随制备温度升高而减小。结果表明AlN纳米锥可在低温条件下获得，且具有较好的场发射性能。
The preparation of A1N nanostructures via the chemical reaction between AlCl3 and NH3 at temperature below 600 ℃ was examined, and AlN nanocones have been obtained at 500 ℃ while no nitride product could be formed at 480 ℃. Field emission measurements show that the AlN nanocones prepared in the temperature range of 500-600℃ exhibit turn-on fields of 14.2 -20 V·μm^-1 which decreases with the elevation of growth temperature. This implies that the AlN nanocones can be gown at lower temperature for field emitters.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2014年第7期1719-1724,共6页
Chinese Journal of Inorganic Chemistry
基金
国家自然科学基金(No.21173115)
“973”(No.2007CB935503)资助项目
关键词
氮化铝
低温生长
化学气相沉积
场发射
纳米锥
AlN
low temperature growth
chemical vapor deposition
field emission
nanocones
