摘要
通过研究不同温度时热等静压（ＨＩＰ）多元扩散偶ＤＤ４０２／ＦＧＨ９５中的Ａ１，Ｔａ和Ｔｉ元素 的扩散规律，发现ＤＤ４０２单晶中存在Ａ１和Ｔａ元素的上坡扩散．因此单晶中在近结合界面处形 成了Ａ１，Ｔａ和Ｔｉ元素的富集区以及γ’相的筏形化．对Ａ１和Ｔａ元素的扩散流量及扩散深度进行 计算．计算结果与试验结果相吻合．
Regularities of interdiffusion of Al, Ti and Ta for DD402/FGH95 couple during HIP at different temperatures were studied. The up-hill diffusion flux of Al and Ta in single crystal DD402 was found. As a re- sult, a rich zone of γ’phase forming elements and rafted γ’phase were developed in single crystal DD402 close to the bonded interface. The diffusion fluxes and diffusion depths of Al and Ta were calculated. The calculated results were corresponding to those the experiments.
出处
《北京科技大学学报》
EI
CAS
CSCD
北大核心
2001年第1期52-54,77,共4页
Journal of University of Science and Technology Beijing
