摘要
研究了施主杂质Nb_2O_5,碱金属氧化物添加物Li_2O和烧成温度对低温一次烧成SrTiO_3陶瓷晶界层电容器介电性能和显微结构的影响。结果表明。Li_2O的加入量对液相烧结的进行和晶粒的生长有很大影响。具有一定特性的液相还能作为氧在晶界上迁移的通道,而有利于氧的挥发,促进晶粒的半导化,Nb_2O_5含量为0.1mol％左右时就能具有良好的效果。在液相特性不能满足晶粒生长要求的情况下,Nb_2O_5含量显著影响着晶粒的半导化程度。添加过多的Nb_2O_5会阻碍晶粒的生长。烧结温度对晶粒生长和材料的介电常数也有明显的影响,适当提高烧结温度能提高材料的介电常数。
In this paper, the effects of donor dopant Nb_2O_5, alkali oxide additive Li_2O and sintering temperature on the dielectric properties and microstructure of SrTiO_3 OBBL capacitors single-fired at low temperature are studied. The results show that as a typical modifier, Li-2O strongly influences the liquid phase sintering and grain growth by the features of the liquid phase occurred at low temperatures. By a medium of oxygen movement through grain boundaries, the liquid phase having certain features is also favorable for the volatilization of oxygen and enhances grain semiconductization. It has a better effect for the material in which the doping amount of Nb_2O_5 is about 0.1 mol％.When the liquid phase can not meet the requirments of grain growth, the amount of Nb_2O_5 obviously influences the degree of grain semiconductization. The excess of doping of Nb_2O_5 will hinder grain growth. The sintering temperature also has an obvious effect on the dielectric constant and grain growth. Appropriate increase of the sintering temperature can increase the dielectric constant.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
1991年第4期354-360,共7页
Journal of The Chinese Ceramic Society
关键词
钛酸锶
陶瓷
晶界层
电容器
氧化锂
strontium titanate ceramics
GBBL capacitors
sintering at low temperatures
lithia
