摘要
研究了Nb掺杂对SnO2-Zn2SnO4系压敏材料电学性质的影响,研究结果表明:当Nb2O5的含量(摩尔分数)从0.05%增加到0.80%时,压敏电阻的压敏电压从28 V/mm增加到530 V/mm;对晶界势垒高度的分析表明:晶粒尺寸的迅速减小是样品压敏电压增高、电阻率增大的主要原因。本文对Nb含量增加引起晶粒减小的原因进行了解释。
The effects of Nb on the electrical properties of SnO2-Zn2SnO4varistor system were investigated. The results show that the breakdown voltage of SnO2-Zn2SnO4based varstors is increased from 28 V / mm to 530V / mm with Nb2O5concentration increasing from 0. 05% to 0. 80%. Measurement of the barrier height at grain boundary reveals that the reason for breakdown voltage and resistivity increasing is the significant decrease of SnO2grain size with Nb2O5concentration. The reason for the deduction of SnO2grain size with increasing Nb2O5concentration is explained.
出处
《河南科技大学学报（自然科学版）》
CAS
北大核心
2014年第3期90-94,10,共5页
Journal of Henan University of Science And Technology:Natural Science
基金
国家自然科学基金项目(50972056)
河南科技大学研究生创新基金项目(CXJJ-Z017)
