摘要
研究了ZnO-Sb_2O_3-BaO系和ZnO-Bi_2O_3-Sb_2O_3-BaO系压敏陶瓷的介电损耗因子D(tanδ)与频率f的关系。发现不含Bi_2O_3试样在室温附近出现一新的损耗峰,峰值频率在2MHz左右,对应的电子陷阱能级为0.18eV,分析认为是由于本征缺陷Zn_i所致。设想Bi离子对Zn_i的出现有抑制作用,这与随Bi_2O_3添加剂含量增多,压敏陶瓷在长期电负荷下的抗退降性能得到改善的实验事实相一致。
The relationship between dielectric loss factor D (tanδ) and frequency for ZnO-Sb2O3-BaO and ZnO-Bi2O3-Sb2O3-BaO varistor ceramics has been investigated. A new dielectric loss peak was found near by 2MHz at room temperature for the sample in the absence of Bi2O3, the corresponding electron trapping level was about 0.18 eV, it was considered that the loss peak resulted from intrinsicdefect Zni . It was assumed that the formation of intrinsic defect Zni was restricted by ion Bi, it was consistent with experimental fact that the degradation properties of varistor ceramics under the long duration load voltage are improved with the increasing amount of Bi2O3.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第5期850-853,共4页
Acta Physica Sinica
基金
国家自然科学基金资助的课题
