摘要
研究了恒定气压下、通入不同气体流量对射频磁控溅射原位沉积氮化铝(AlN)薄膜应力、结晶质量和表面形貌的影响。利用应力分析仪、X线衍射(XRD)、原子力显微镜(AFM)和台阶仪对AlN薄膜的结构特性进行了分析。结果表明,恒定气压下改变通入气体流量对薄膜应力、结晶质量、表面形貌及粗糙度和薄膜沉积速率均有影响。当通入气体流量为10cm3/min时,AlN薄膜呈明显的压应力,结晶质量较差。增加通入气体流量降低了薄膜沉积速率和增加了表面粗糙度,但有利于减小薄膜的压应力和提高薄膜的结晶质量。本实验条件下得出的溅射AlN薄膜的最佳流量条件为50cm3/min。
This work focused on the effect of input gas flux on the residual stress, crystalline quality and mor- phology of RF sputtered aluminum nitride （A1N） films. The stress measurement system, X-ray diffractometer, atomic force microscopy and field emission scanning electron microscopy were used to analyze the characteristics of AIN films. The result demonstrated that the change of the input gas flux at a fixed pressure has effect on the stress, crystallization quality, morphology, and surface roughness and deposition rate of AIN films. When the input gas flux is 10 cm^3/min, A1N film appears as apparent compressive stress, and the crystallization quality is poor. The deposition rate is decreased and the surface roughness is increased when the input gas flux is increased, while is ben- eficial to decrease the compressive stress and improve crystalline quality of A1N films. The optimum input gas flux for depositing high-quality A1N film is 50 cm^3/min under this experimental condition.
出处
《压电与声光》
CSCD
北大核心
2014年第2期217-220,共4页
Piezoelectrics & Acoustooptics
