摘要
用KrF准分子脉冲激光在 2 0 0℃的Si(111)基板上通过改变制备条件 ,采用沉积后直接保温处理的方式制备出了具有不同择优取向的AlN薄膜 ,并得出了较高的处理温度和过长的时间不利于AlN相的形成的结论。
AlN thin films with dominant crystalline structure were prepared on Si(111) substrate at low temperature (200℃) with a KrF excimer pulsed laser by varying the deposition conditions.And the forming of AlN phases were precluded by the long time and high temperature in heat treatment after the deposition.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2000年第B05期101-102,共2页
Journal of Functional Materials
