摘要
以GaP为靶材采用射频磁控溅射法制备GaP红外光学薄膜,通过保持ArⅠ750nm发射光谱线强度不变获得了不同工艺参数,并对沉积过程进行了计算机模拟.功率较小、气压较大时,Ga和P的溅射率、输运效率及沉积到衬底时的能量均较小,Ga的溅射率及输运效率均大于P的,使薄膜沉积速率较低、薄膜中Ga的含量大于P的,GaP薄膜产生较大吸收.功率较大、气压较小时,Ga和P的溅射率、输运效率及沉积到衬底时的能量均增大,Ga的溅射率大于P的、但其输运效率小于P的,使GaP薄膜的沉积速率增大、薄膜中Ga与P的含量接近化学计量比,GaP薄膜的吸收降低,因此有利于制备厚度较大的GaP薄膜.
GaP IR thin films were deposited through RF magnetron sputtering with a GaP disk as the target. The intensity of Ar Ⅰ750nm optical emission line was kept the same in different experiments, with which various deposition parameters were got, and the deposition processes were studied with computer simulation. The results showed that under low sputtering power and high working gas pressure, the sputtering yields and transporting efficiencies of Ga and P atoms as well as their energies at arriving the substrate＇s surface are small, the sputtering yield and transporting efficiency of Ga atom are both larger than those of P atom, hence the depositing rate of GaP film is low, the content of Ga in the film is larger than that of P, which makes the film have high absorbance in IR waveband. But under high sputtering power and low working gas pressure, the atoms＇ sputtering yields, transporting efficiencies and energies at arriving the substrate＇ s surface all increase, the sputtering yield of Ga atom is larger than that of P atom, whereas its transporting efficiency is smaller than that of P atom, hence the depositing rate of GaP film is high and stoichiometric film with low absorbance is deposited, which is advantageous to depositing large-thickness GaP film.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第5期2937-2944,共8页
Acta Physica Sinica
基金
航空科学基金(批准号:04G53043)资助的课题~~
关键词
GAP
薄膜
射频磁控溅射
计算机模拟
GaP, thin film, RF magnetron sputtering, computer simulation
