摘要
在小注入、稳定光照、忽略电场影响的情况下， 简要分析了影响光电压大小的因素。设样品的少子产生率仅是一维坐标的函数， 计算了Ｐ 型双面抛光硅单晶样品的表面光电压。结果表明， 表面势、光照强度对表面光电压的影响较大， 少数载流子在硅中的扩散长度、样品厚度等对表面光电压也有一定的影响。由于背抛光面对受光面入射光的反射， 使得少子产生率和受光面表面光电压都高于单面抛光片。
The factors affecting the surface photovoltage were briefly analyzed in the condition of little injection, stable illumination and electric field negligible. The surface photovoltage of P-type crystal silicon wafer polished both sides was calculated on the assumption that the minority carrier generation of sample is only a function of one dimension coordinate. The results show that the volume of photovoltage is related to light illumination, surface potential and thickness of wafer, diffusion length of minority carrier in silicon. The surface potential and light intensity will mainly affect the volume of the surface photovoltage.Because of the reflection on the back surface the minority carrier generation and illuminated surface photovoltage of both sides polished wafer will be higher than one of single side polished wafer.
出处
《江苏石油化工学院学报》
1999年第4期38-41,共4页
Journal of Jiangsu Institute of Petrochemical Technology
关键词
计算
表面光电压
双面抛光硅单晶
载流子
Calculation of photovoltage
Surface photovoltage
Silicon wafer polished both sides
