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表面光电压法研究氧化工艺铁离子沾污

Investigation on Fe Contamination in Oxidation Process by Surface Photovoltage Technique
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摘要 表面光电压法(SPV)能精确测量硅片的Fe离子浓度,是一种快速、非破坏性的高灵敏度测试方法。采用表面光电压技术研究了氧化工艺中的Fe离子沾污。研究表明,氧气、氮气、三氯乙烯中含有的微量杂质是氧化工艺中Fe离子沾污的主要来源。通过对氧气、氮气进行进一步纯化处理、减少三氯乙烯杂质质量分数到1.0×10-8、更换传输气体的不锈钢管路等措施,将氧化工艺Fe离子沾污减少了一个数量级。 The Fe content in the silicon wafer can be accurately determined by surface photovoltage （SPV） technique which is a rapid and nondestructive measure with high sensitivity. In this study, the Fe contamination in the oxide process was investigated by means of SPV technique. The results show that trace impurity contained in the oxygen, nitrogen and trichloroethylene mainly lead to the Fe contamination in the oxidation process. Through purifying oxygen and nitrogen, reducing the content of trace metal in the trichloroethylene from 1.0 × 10-7 to 1.0×10-8 and renewing the stainless steel pipeline for transmitting oxygen and nitrogen, the Fe contamination in oxidation process is reduced by one order of magnitude.
作者 廖乃镘 林海青 向华兵 李贝 李仁豪
机构地区 重庆光电技术研究所
出处 《半导体光电》 CAS CSCD 北大核心 2013年第4期600-602,606,共4页 Semiconductor Optoelectronics
关键词 电荷耦合器件 氧化工艺 Fe离子沾污 表面光电压 charge-coupled device oxide process Fe iron contamination surfacephotovoltage
分类号 TN386.5 [电子电信—物理电子学]
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参考文献9

  • 1Istratov A A,Flink C, Hieslmair H, et al. Intrinsicdiffusion coefficient of interstitial copper in silicon[J]. Phys. Rev. Lett. , 1998, 81(6): 1243-1246.
  • 2Joong S J,Stefan De G, Srini R, et al. Behaviors of metallic contaminants in si wafer processing[J]. Solid State Phenomena, 2001, 76: 123-126.
  • 3Jastrzeski L,Milic O, Dexter M, et al. Monitoring of heavy metal contamination during chemical cleaning with surface photovoltage[J]. J. Electrochem. Soc., 1993, 140(4): 1152-1159.
  • 4Istratov A A, Hieslmair H, Weber E R. Iron contamination in silicon technology[J]. Appl. Phys. A, 2000, 70(5): 489-534.
  • 5廖乃镘,龙飞,罗春林,雷仁方,李贝,李仁豪.减少硅片湿法清洗工艺铁离子沾污研究[J].半导体光电,2011,32(4):509-512. 被引量：3
  • 6Buczkowski A, Rozgonyi G, Shimura F, et al. Photoconductance minority carrier lifetime vs surface photovoltage diffusion length in silicon[J]. J- Electrochem. Soc., 1993, 140(11): 3240-3245.
  • 7Henley W B,Ramappa D A. Iron precipitation in float zone grown silieon[J]. Appl. Phys., 1997, 82(2): 589-594.
  • 8Eicke R W. Transition metals in silicon[J]. Appl. Phys. A, 1983, 30(1): 1-22.
  • 9Masataka H,Toshio N, Yasunori O, et al. A Method of Quantitative contamination with metallic impurities of the surface of a silicon wafer[J]. Jpn. J. Appl. Phys. , 1988, 27(12): L2361-L2363.

二级参考文献16

  • 1刘红艳,万关良,闫志瑞.硅片清洗及最新发展[J].中国稀土学报,2003,21(z1):144-149. 被引量：30
  • 2Istratov A A,Flink C,Hieslmair H,et al.Intrinsic diffusion coefficient of interstitial copper in silicon[J].Phys. Rev. Lett.,1998,81(6):1243-1246.
  • 3Joong S J,Stefan De G,Srini R,et al.Behaviors of metallic contaminants in Si wafer processing[J].Solid State Phenomena,2001,76/77:123-126.
  • 4Ohmi T.Total room temperature wet cleaning for Si substrate surface[J].J. Electrochem. Soc.,1996,143:2957-2965.
  • 5Jastrzeski L,Milic O,Dexter M,et al.Monitoring of heavy metal contamination during chemical cleaning with surface photovoltage[J].J. Electrochem. Soc.,1993,140:1152-1159.
  • 6Istratov A A,Hieslmair H,Weber E R.Iron contamination in silicon technology[J].Appl. Phys. A,2000,70:489-534.
  • 7Buczkowski A,Rozgonyi G,Shimura F,et al.Photoconductance minority carrier lifetime vs Surface Photovoltage Diffusion Length in Silicon[J].J. Electrochem. Soc.,1993,140(11):3240-3245.
  • 8Henley W B.Iron precipitation in float zone grown silicon[J].Appl. Phys.,1997,82(2):589-594.
  • 9Eicke R W.Transition metals in silicon[J].Appl. Phys. A,1983,30:1-22.
  • 10Masataka H,Toshio N,Yasunori O,et al.A method of quantitative contamination with metallic impurities of the surface of a silicon wafer[J].Jpn. J. Appl. Phys.,1988,27:L2361-L2363.

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半导体光电
2013年 第4期

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