摘要
为了将聚甲基丙烯酸甲酯(PMMA)上的图案等比例的转移到硅基材料上,对基于感应耦合等离子体技术(Inductively Coupled Plasma,ICP)的Si和PMMA的刻蚀速率进行了研究。结合英国牛津仪器公司的ICP180刻蚀系统,以SF6和O2混合气体为反应气体,研究了在其他参数相同的情况下,不同气体比例对两种材料刻蚀速率的影响,得到刻蚀速率随气体比例变化的曲线,并得出了对于Si和PMMA刻蚀速率相同时的气体比例。实验发现,如果增加反应气体中SF6的比重,会加快Si的刻蚀速率而降低PMMA的刻蚀速率,反之,若降低SF6的比重而增加O2的比重,则会相应降低Si的刻蚀速率而增加PMMA的刻蚀速率。据此,通过调节反应气体的比例,实现对Si和PMMA的同速率去除。
In order to transfer the pattern from PMMA to silicon -based materials with equal proportion, the etching rate of Si and PMMA based on inductively coupled plasma （ICP） is studied. Combined with the etching system of British Oxford instruments named ICP180, the mixed gas of SF6 and O2 ,as reaction gas,are used to research the etching rate effects of the two materials by different gas ratio under the same parameters. The curve of etching rate change, with the ratio of gas, and the gas ratio under the same etching rate are obtained. The experiments show that the etching rate of Si will increase, if the proportion of SF6 is incrased, and the. etching rate of PMMA will decrease. And vice versa, if the proportion of SF6 is reduced and the proportionof O2 is increased, the etching rate of Si will be decreased and the ewhing rate of PMMA will be increased. Accordingly, the same etching rate of Si and PMMA is obtained by adjusting the reaction gas ratio.
出处
《微处理机》
2014年第1期9-11,14,共4页
Microprocessors
基金
国防基础研究项目(A0920110019)
国防基础科研计划资助(A0920110016)
