摘要
在室温、10 Pa氩气环境气体中,采用脉冲激光烧蚀技术,在以烧蚀点为圆心、半径为2 cm的玻璃弧形支架的不同角度处放置衬底,沉积了纳米Si晶薄膜。通过扫描电子显微镜、拉曼散射仪对制备样品的形貌和特性进行分析。结果表明:纳米Si晶粒以羽辉轴线为轴呈对称分布,在轴线处平均尺寸最大,随着衬底同轴线夹角的增加,晶粒尺寸逐渐减小。结合朗缪尔探针对空间不同位置羽辉中Si离子密度和热运动温度分布的诊断情况,从晶粒生长过程的角度对其尺寸随空间位置变化的结果进行了研究,得到了晶粒尺寸正比于烧蚀粒子密度和热运动温度的结论。
Si nano-crystal films were deposited by pulsed laser ablation in Ar gas of 10 Pa at room temperature. Substrates were fixed on the glass arc bracket with different angles to plume axis, and the center of arc bracket was ablation spot. The morphology and composition of samples were characterized by scanning electron microscopy and Raman scattering spectra. The results indicate that the distribution rule of nanoparticles is symmetrical for plume axis, the average size is biggest along the direction of axis and deduced following with addition of the angle between substrates and plume axis. The results were analyzed at the point of growth process of nanoparticles on the base of Langmuir probe diagnostic results about distribution of Si ion density and thermal motion temperature in different location of the space, which showed that the size of nanoparticles was proportional to the density and thermal motion temperature of Si particles.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第12期2686-2690,共5页
Journal of Synthetic Crystals
基金
国家重点基础研究发展计划(973计划)前期专项基金(2011CB612305)
河北省自然科学基金(E2011201134
E2012201035)
河北省高等学校科学研究项目(Q2012084)
