摘要
分别在Al∶ZnO(ZAO)薄膜和Mo薄膜两种不同衬底材料上,采用"三步法"共蒸发工艺沉积了约0.8μm厚的CuGaSe2(CGS)薄膜,用X射线衍射仪测量薄膜的织构,研究不同衬底材料对CGS薄膜的影响。在ZAO薄膜底电极上沉积的CGS薄膜的(112)衍射峰强度较Mo薄膜底电极上减弱,(220/204)衍射峰反而增强。
CuGaSe2 （CGS） thin films with thickness of 0. 8 ~xm were prepared by ＂ three step＂ coevaporation technology on AI： ZnO （ZAO） film and Mo film, respectively. The influence of substrates on the preferential growth of the films was investigated by XRD diffractometer. The intensity （ 112 ） texture of CGS films deposited on the two substrates mentioned above decreases the given order, while the intensity （220/204） texture increases gradually.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第12期2572-2575,共4页
Journal of Synthetic Crystals
基金
国家高技术研究发展计划(863计划)(2012AA050701)
关键词
宽带隙
铜镓硒
共蒸发
衬底
wide band gap
CGS
coevaporation
substrate
