摘要
本文采用共蒸发三步法沉积Cu(In,Ga)Se2(CIGS)薄膜,其中关于Cu化合物的相转变过程是制约吸收层质量的关键。本文详细研究了三步法工艺中吸收层由贫Cu薄膜向富Cu薄膜转变的相变过程,通过X射线衍射仪(XRD)、X射线荧光光谱仪(XRF)及扫描电镜(SEM)结合的方法总结出三步法工艺的相变过程。
In this paper,Cu(In,Ga)Se2(CIGS) thin film via co-evaporation "three-stage process" has been investigated.The Cu-compound transformation process of "three-stage process" is the key problem for the high-quality absorb.The phase transformation from Cu-poor film to Cu-rich was concluded by XRD,XRF and SEM results.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第6期1519-1523,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(61144002)
中央高校基本科研业务费专项资金(65010351)
关键词
CIGS薄膜
共蒸发三步法
相变过程
CIGS film
co-evaporation "three-stage process"
phase transformation