期刊文献+

共蒸发三步法制备CIGS薄膜的相变过程 被引量:5

Phase Transformation of CIGS Film Prepared by Co-evaporation "Three-stage Process"
在线阅读 下载PDF
导出
摘要 本文采用共蒸发三步法沉积Cu(In,Ga)Se2(CIGS)薄膜,其中关于Cu化合物的相转变过程是制约吸收层质量的关键。本文详细研究了三步法工艺中吸收层由贫Cu薄膜向富Cu薄膜转变的相变过程,通过X射线衍射仪(XRD)、X射线荧光光谱仪(XRF)及扫描电镜(SEM)结合的方法总结出三步法工艺的相变过程。 In this paper,Cu(In,Ga)Se2(CIGS) thin film via co-evaporation "three-stage process" has been investigated.The Cu-compound transformation process of "three-stage process" is the key problem for the high-quality absorb.The phase transformation from Cu-poor film to Cu-rich was concluded by XRD,XRF and SEM results.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2012年第6期1519-1523,共5页 Journal of Synthetic Crystals
基金 国家自然科学基金(61144002) 中央高校基本科研业务费专项资金(65010351)
关键词 CIGS薄膜 共蒸发三步法 相变过程 CIGS film co-evaporation "three-stage process" phase transformation
  • 相关文献

参考文献10

  • 1Philip J, Dimitrios H, Erwin L, et al. New World Record Efficiency for Cu ( In, Ga) SO2 Thin-film Solar Ceils beyond 20% [ J ]. Progress in Photovoltaics : Research and Applications,2011,19(7) :894.
  • 2Gabor A M, Turtle J R, Albin D S, et al. High-efficiency CuIn, Gal_xso2 Solar Ceils Made from (InxGal_,)2Se3 Precursor Films[ J].Appl. Phys. Lett. ,1994,65(2) :198.
  • 3Miguel A C, Brian E, David K et al. Texture Manipulation of CuInso2 Thin Films[J]. Thin Solid Films ,2000 ,3fil-362 :167.
  • 4Guiilemoles J F. Stability of C u( In, Ga)SO2 Solar C eils:A Thermodynamic Approach [ J]. Thin Solid Films,2000,361-362:338.
  • 5Boehnke U C, Kuhn G P. Phase Relations in the Ternary System Cu-In-SO [ J ]. Journal of materials science, 1987,22 : 1635.
  • 6Nishiwaki S, Satoh T, Hayashi Set al. Preparation of Cu (In, Ga)SO2 Thin Films from In-Ga-SO Precursors for High-efficiency Solar Ceils [ J]. J. Mater. Res. , 1999,14:4514.
  • 7Zhang S B, Wei S H, Zunger A. Defect Physics of the CuInSez Chainopyrite Semiconductor[ J]. Physical review B. , 1998,57:9642.
  • 8Klenk R, T Walter, Schock H Wet al. A Model for the Successful Growth of Polycrystalline Films of CuInSe2 by Mulfisource Physical Vacuum Evaporation [ J ]. Adv. Mater. , 1993,5 : 114.
  • 9Turtle J R, Contreras M A, Tennant A. et al. High-Efficiency Thin-fdm Cu (In, Ga)Se-Based Photovoltaic Devices: Progress Towards A Universal Approach to Absorber FabricationE C 1.23th IEEE Photovoltaic Specialists Conference (New York) ,1993,415.
  • 10Wada T, Kohara N, Negami T, et al. Growth of CuInSe: Crystals in Cu-rich Cu-ln-Se Thin Films[J]. J. Mater. Re.s. ,1997,12:1456.

同被引文献27

  • 1敖建平.CIGS薄膜太阳电池产业化的最新进展及发展趋势[J].人工晶体学报,2012,41(S1):189-195. 被引量:4
  • 2敖建平,孙云,王晓玲,李凤岩,何青,孙国忠,周志强,李长健.共蒸发三步法制备CIGS薄膜的性质[J].Journal of Semiconductors,2006,27(8):1406-1411. 被引量:12
  • 3杨邦朝 王文生.薄膜物理与技术[M].成都:电子科技大学出版社,1997..
  • 4李微,敖建平,何青,刘芳芳,李凤岩,李长健,孙云.衬底对Cu(In,Ga)Se_2薄膜织构的影响[J].物理学报,2007,56(8):5009-5012. 被引量:10
  • 5熊绍珍,朱美芳著.太阳能基础与应用[M].北京:科学出版社,2009:13-17.
  • 6Fraunhofer ISE. World Record: 41.1% Efficiency Reached for Multi-Junction Solar Cells at Fraunhofer ISE [ R ]. Press Release, 14-01-2009.
  • 7Bauknecht A, Siebentritt S, Gerhard A, et al. Defects in CuGaSe2 Thin Films Grown by MOCVD [ J ]. Thin Solid Films,2000,361-362:426- 431.
  • 8Saad M, Riazi H, Bucher E, et al. CuGaSe2 Solar Cells with 9.7% Power Conversion Efficiency [ J ]. Applied Physics A : Materials Science & Processing, 1996,62 ( 2 ) : 181-185.
  • 9Young D L, Keane J, Duda A, et al. Improved Performance in ZnO/CdS/CuGaSe2 Thin-Film Solar Cells [J]. Progress in Photovoltaics: Research and Applications, 2003,11 ( 8 ) : 535-541.
  • 10Nishiwaki S, Siebentritt S, Walk P, et al. A Stacked Chalcopyrite Thin-Film Tandem Solar Cell with 1.2 V Open-Circuit Voltage[J]. Progress in Photovoltaics : Research and Applications,2003,11 ( 4 ) : 243-248.

引证文献5

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部