摘要
在550℃下的H2S气氛中退火处理电沉积制备的Cu(In,Ga)Se2(CIGS)预置层,制备了太阳电池光吸收层Cu(In,Ga)(Se,S)2(CIGSS)薄膜.采用X射线能量色散谱、俄歇电子能谱、扫描电镜、X射线衍射和拉曼光谱对退火前后的薄膜进行表征.结果表明,H2S气氛下退火能够实现薄膜中O的去除和S的掺入,同时使得各元素的纵向分布更加均匀并可消除Cu-Se微相.此外,H2S退火还可改善薄膜的结晶性能,并使S和Ga进入黄铜矿结构,薄膜晶格参数变小.
The solar cell light absorber Cu（In,Ga）（Se,S）2（CIGSS） thin films were prepared by annealing the electrodeposited Cu（In,Ga）Se2（CIGS） precursors in H2S ambient at 500 ℃. The precursors and annealed films were characterized by energy dispersive X-ray spectroscopy, Auger electron spectroscopy, scanning electron microscopy, X-ray diffraction and Raman scattering. The results show that the complete removal of oxygen atom from the film and a substitution of Se by S can be achieved by H2S-annealing. Furthermore, the depth profiles of constituent elements become more uniform, and the Cu-Se micro-phase can be eliminated by H2S-annealing. Moreover, the CIGSS films have good crystallinity and smaller crystal lattice parameters with S and Ga incorporation into the chalcopyrite structure.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第2期1196-1201,共6页
Acta Physica Sinica
基金
高等学校博士学科点专项科研基金(批准号:200805331121)
湖南省自然科学基金(批准号:09JJ3110)资助的课题~~
