摘要
采用直流磁控反应溅射法,在基片表面引入RF偏置,在Si(111)衬底上成功制备了(002)向AlN薄膜。使用高分辨率X射线衍射仪(XRD)来表征薄膜质量。当RF偏置从0 W变化到20 W时,XRD测试(002)摇摆曲线的半高宽有着显著的变化。当RF偏置为15 W时,AlN薄膜表现出了良好的(002)生长取向。实验结果表明,适当的RF偏置能够提高Al原子和N原子反应时的活性,促进AlN薄膜的(002)择优生长。该溅射方案应用于薄膜体声波谐振器(FBAR)谐振器工艺加工,成功制作了Q值为300,机电耦合系数为5%的FBAR样品。
With a RF bias on substrate,the（002）oriented aluminum nitrogen（AlN）thin films was successfully deposited on single-crystal Si（111）wafers by DC magnetron sputtering.The crystalline quality of AlN was characterized by high-resolution X-ray diffraction（HR-XRD）.As a RF bias changes from 0 W to 20 W,the full width at half maximum（FWHM）of（002）rocking curve changed significantly.The films exhibited a very high degree of（002） orientation especially when RF bias equal to 15 W.The experimetal results show that the properties of AlN films are very dependent on the energy of Al-N reaction.Film bulk acoustic resonators（FBAR） were fabricated by using the sputtering condition,and the resonator had an effective mechanical coupling coef films cient of 5% and a quality factor of 300.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第8期627-629,共3页
Semiconductor Technology
