摘要
基于金属有机化学气相沉积(MOCVD)生长的高质量AlGaN/GaN异质结构材料,采用选择性栅挖槽结合栅介质工艺实现GaN增强型/耗尽型(E/D)HEMT器件的集成,应用直接耦合场效应管逻辑(DCFL)设计并研制GaN E/D HEMT集成逻辑门电路。通过对GaN E/D器件性能以及逻辑门电路性能的分析讨论,研究了GaN E/D器件性能对逻辑门电路性能的影响。同时还对选择性栅挖槽结合栅介质工艺实现GaN E/D器件存在的问题进行了分析讨论。
Characterizations of enhancement/depletion-mode AlGaN/GaN HEMTs logic gates were presented in this paper. The selective gate recessing and gate dielectric processes were used to fabricate the enhancement/depletion-mode （E/D） AIGaN/GaN HEMT device. The logic gates were designed by the direct coupled field-effect transistor （FET） logic （DCFL）. With the analysis of the measured results of the device and circuits, the influence of the characteristic of the GaN E/D device on the performance of the logic circuits was discussed. Meanwhile, the prob- lem existing in GaN E/D device processing was also discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2013年第6期509-513,521,共6页
Research & Progress of SSE
