摘要
本文介绍了高电子迁移率晶体管(HEMT),赝高电子迁移率晶体管(PHEMT)和用它们做的直接耦合场效应逻辑电路(DCFL)的结构、设计和制造。由11级环形振荡器测得在室温下的最小传播延迟时间是69～78ps/门,相应功耗0.8～0.3mW/门。
This paper introduces structures, designs and fabrications of HEMT, PHEMT and DCFL circuit using them. The lowest propagation detay time measured by 11-stage ring oscillators at room temperature is 69～78ps/gate, the corresponding power dissipation is 0.8～0.3mW/gate.
出处
《半导体情报》
1990年第2期59-62,共4页
Semiconductor Information
