摘要
利用作者提出的HEMT DCFL倒相器直流传输特性及瞬态特性计算机分析的模型,设计并制成了HEMT DCFL门电路及环形振荡器.在电路设计中,重点讨论了E/D NEMT倒相器的电路性能与器件的主要参数(栅长、栅宽、阈压)间的理论关系.工艺研究中,建立了挖栅时沟道饱和电流Is′与阈压值V_(t^h)间关系的理论曲线,并改进了传统化学湿法刻蚀工艺的阈压均匀性及E,D器件电流匹配的控制精度.实验制作了栅长为1μm的增强型和耗尽型HEMT.在1×1mm范围内,阈压偏差小于50mV,E/D倒相器的传输特性为:V_(OH)≈V_(DD),V_(OL)<0.1V,高、低电平转换范围仅0.1V,噪容达0.3V左右.研制的9级、17级环形振荡器,在V_(DD)为0.5V到3.5V范围内都观察到正弦波振荡波形.
Using a model proposed by authors for simulating the transfer and transient characteristic of an HEMT E/D inverter, we have fabricated the HEMT gate circuits and the ring oscillators with 1μm gate-length. The theoretical relation between the circuit characteristic of the HEMT E/D inverter and the main device parameters(gate-length, gate-width, threshold voltage) has been discussed ia detail. The threshold uniformity and the current fitness between E- and D-devices have been improved even with the traditional wet-atching processing, and a set of curves of channel saturated current Is' versus threshold Vih are established.The Vih standard deviation of fabricated E- and D-HEMTs in circuits is less than 50mV over an area of 1 × 1 mm The measured transfer characteristics of the HEMT inverters are as follow: VOH±VDD, VoL<0.1V with a noise margine of 0.3V. The oscillating is also observed from the fabricated 9-stage and 17-stage HEMT ring oscillators with the supply voltage ranging from 0.5V to 3.5V.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第1期13-21,共9页
Research & Progress of SSE
