摘要
利用亚阈测量技术对BF+2 注入硅栅PMOSFET辐射感生界面陷阱进行了测量。对BF+2 注入PMOSFET具有抑制辐射感生界面陷阱的机理进行了分析和讨论。
The radiation induced interface traps on BF + 2 implanted Si gate PMOSFET are measured using the subthreshold method. The mechanism of depression of the radiation induced interface traps by the BF + 2 implanted has also been analysed.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2000年第4期350-354,共5页
Atomic Energy Science and Technology
