摘要
本文介绍硅锗技术在提高器件和电路性能方面的新发展,包括用于提高器件速度和低温下应用的硅锗异质结双极晶体管(HBT),以及用于提高PMOS管空穴迁移率的硅锗异质结构.
SiGe alloy technology for promoting the performance of devices and circuits is introduced in this paper. It includes Si Ge-base heterojunetion bipolar transistors (HBT) for application of high speed and low temperature, and SiGe heterostructurc for increasing the hole mobility of PMOS.
出处
《电子器件》
CAS
1991年第4期49-52,共4页
Chinese Journal of Electron Devices
