摘要
对影响EIS(电解质溶液—绝缘层—半导体)型光寻址电位传感器(Light Addressable Potentiometric Sensor,LAPS)的特性参数进行研究。通过CHI660D型电化学工作站检测不同厚度LAPS芯片输出的光电流信号,分析了硅基底厚度与LAPS芯片检测灵敏度和检测量程之间的关系;还讨论了偏压大小对输出信号稳定性的影响,并在较低偏置电压下测试不同浓度的pH缓冲溶液,获得了较好的线性关系,线性相关系数为0.999 1。
The characteristic of the E1S-type （electrolyte-insulator-semiconductor） light-addressable potentiometric sensor （LAPS） was studied. The relation among the Silicon substrate depth, sensitivity and measuring range of LAPS chip was analyzed by measuring the photocurrent signal from LAPS chip with electrochemical workstation of CHI660D. Furthermore, the effect of de-bias voltage upon the output signal stability was discussed. And a good linear relationship in low de-bias voltage was achieved. The line- ar correlation coefficient is O. 999 1.
出处
《仪表技术与传感器》
CSCD
北大核心
2013年第7期11-13,共3页
Instrument Technique and Sensor
基金
国家高技术研究发展计划(863计划)(2009AA04Z214)
国家大学生创新实验项目(zcc016233)
桂林电子科技大学教改项目(ZL230142)
