摘要
本文制备了几种含不同磨料(SiC、Al2O3、不同粒径SiO2)的抛光液,通过纳米粒度仪分析磨料粒径分布,采用原子力显微镜观察磨料的粒径大小。研究了不同磨料对蓝宝石晶片化学机械抛光(CMP)的影响,利用原子力显微镜检测抛光前后蓝宝石晶片表面粗糙度。实验结果表明,在相同的条件下,采用SiC、Al2O3作为磨料时,材料去除速率与表面粗糙度均不理想;而采用含1%粒径为110 nm SiO2的抛光液,材料的去除速率最高为41.6 nm/min,表面粗糙度Ra=2.3 nm;采用含1%粒径为80 nm SiO2的抛光液,材料的去除速率为36.5 nm/min,表面粗糙度最低Ra=1.2 nm。
In this work,the effect of different abrasives(SiC,Al2O3 and various sizes of SiO2) on the material removal rate(MRR) and the surface quality of sapphire substrate after the chemical mechanical polishing(CMP) was investigated.The average diameter and shape of the prepared abrasive particles were characterized by Mastersizer and atomic force microscopy(AFM),respectively.The surface roughness of sapphire substrate polished by different abrasive was measured by AFM.It was found that the lower removal rate and bad surface quality were obtained when SiC and Al2O3 were chosen as the abrasive in the slurry.Under the same condition,the MRR of sapphire substrate polished with 1wt% 110 nm SiO2 is 41.6 nm/min,but the material removal rate of sapphire substrate is 36.5 nm/min,when 80 nm SiO2 is used as abrasive.The surface roughness of sapphire substrate polished with 1wt% 110 nm SiO2 is 2.3 nm,while the surface roughness of sapphire substrate polished with 1wt% 80 nm SiO2 is 1.2 nm.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第6期1064-1069,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金项目(50975002)
安徽工业大学创新团队项目(TD201204)
教育部高校留学回国人员科研项目
关键词
蓝宝石
化学机械抛光
去除速率
表面粗糙度
磨料
sapphire
chemical mechanical polish
removal rate
removal rate
surface roughness
abrasive
