摘要
介绍了Ⅲ Ⅴ族化合物单晶生长工艺包括LEC、VCZ、VGF/VB、HB的发展现状 ;欲生长大直径、高质量单晶 ,仍须对热传输和化学计量等问题进行深入研究。目前 ,全世界Ⅲ Ⅴ族半导体单晶产量约 80t,产值约 5亿美元。
The growth technologies for Ⅲ Ⅴs semiconductor crystal including LEC,VCZ,VGF/VB and HB were reviewed.The thermal transfer characteristics in growth system and stoichiometry in melt and crystal must be investigated further in order to grow high quality crystals with larger diameter.Nowadays,the annual yield and output value of Ⅲ Ⅴs semiconductor crystals is about 80 t and 500 M respectively in the world.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2000年第5期378-382,共5页
Chinese Journal of Rare Metals
