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电感耦合等离子体原子发射光谱法测定镍基钎焊料中铬和硅 被引量:6

Determination of chromium and silicon in nickel-based brazing material by inductively coupled plasma atomic emission spectrometry
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摘要 探讨了电感耦合等离子体原子发射光谱法(ICP-AES)测定镍基钎焊料中铬和硅的分析条件。试样经王水和氢氟酸混合酸溶解,选择267.716(125)nm和251.612(133)nm的光谱线分别作为铬和硅的分析线,并采用基体匹配法降低了基体效应,ICP-AES测定了镍基钎焊料中铬和硅含量。实际样品中铬和硅的测定结果与过硫酸铵氧化滴定法和高氯酸脱水法相符,铬和硅的相对标准偏差(n=6)分别为0.55%~0.73%和0.71%~1.0%,加标回收率分别为100%~101%和99%~100%。 The analysis conditions of chromium and silicon in nickel-based brazing material by inductively coupled plasma atomic emission spectrometry(ICP-AES)were discussed.After the nickelbased brazing material was dissolved with aqua regia-hydrofluoric acid mixed acid,and matrix effect was reduced by matrix matching,chromium and silicon in the sample were determined by ICP-AES with spectral line of 267.716(125)nm and 251.612(133)nm as the analytical lines for chromium and silicon respectively.This proposed method was applied to the determination of chromium and silicon in actual samples and the results were consistent with those obtained by ammonium persulfate oxidization titration method and perchloric acid dehydration method.The relative standard deviation(RSD,n =6)of chromium and silicon was 0.55%-0.73% and 0.71%-1.0%,respectively.The recoveries were 100%-101%and 99%-100%,respectively.
出处 《冶金分析》 CAS CSCD 北大核心 2013年第6期63-66,共4页 Metallurgical Analysis
关键词 电感耦合等离子体原子发射光谱法 镍基钎焊料 inductively coupled plasma atomic emission spectrometry chromium silicon nickel-based brazing material
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