期刊文献+

直接敷铜Al_2O_3陶瓷基板的界面产物研究 被引量:3

Interfacial Product of Direct Copper-Bonded Alumina Substrate
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摘要 直接敷铜Al2O3基板已被广泛应用于大功率场合.本文通过Cu箔表面预氧化生成Cu2O的方法引入氧,1070℃在Cu箱和Al2O3基板界面上所产生的Cu-Cu2O共晶液体促进了二者的牢固结合.流动氮气氛下保温1h,观察到了明显的界面产物层.SEM和XRD的分析表明,界面产物相为CuAlO2. Direct copper-bonded alumina substrates were widely used in large-power applications. Cu-Cu2O eutectic bonding of copper to Al2O3 was investigated in this paper. Oxygen was introduced by pre-oxidizing copper foil and it was shown that Cu-Cu2O eutectic liquid promoted the bonding between copper and Al2O3 greatly. Chemical reaction happened at the solid-liquid interface and led to the formation of the binary oxide CuAlO2, which can be observed when the specimen was prepared at 1070℃ for 60min.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2000年第5期935-938,共4页 Journal of Inorganic Materials
关键词 直接敷铜法 预氧法 界面产物 氧化铝陶瓷 基板 direct bonded copper(DBC) pre-oxidizing interfacial product
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参考文献2

  • 1Sung T K,J Mater Sci,1989年,24卷,2061页
  • 2Sun Y S,IEEE Trans Electron Devices,1976年,23卷,8期,961页

同被引文献79

  • 1陈大钦,林锋,肖来荣,蔡和平,蒋显亮,易丹青.DBC 电子封装基板研究进展[J].材料导报,2004,18(6):76-78. 被引量:11
  • 2罗雁横,张瑞君.新型陶瓷/金属化合物基板——直接敷铜板[J].电子与封装,2005,5(2):18-21. 被引量:5
  • 3坚增运,杨根仓,周尧和.Al与γ-Al_2O_3润湿角的计算[J].复合材料学报,1996,13(1):46-49. 被引量:5
  • 4[30]Straneh G.Method for manufacturing a power semiconductor device and direct bonded substrate thereof.U S Patent:6670216B2,2003
  • 5[31]Sehulz-Harder J,Exel K.Advanced DBC (direct bonded copper) substrates for high power and high voltage electronics.In:Semiconductor Thermal Measurement and Management Symposium,2006 IEEE Twenty-Second Annual IEEE.Piscataway,N J,USA:IEEE,2006:230-231
  • 6[32]Dupont L,Khatir Z,Lefebvre Set al.Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling.Microelectronics Reliability,2006 ;46:1 766~1 771
  • 7[38]Ning H L,Ma J S,Huang F X et al.Preoxidation of the Cu layer in direct bonding technology.Applied Surface Science,2003 ;211:250~258
  • 8[39]He H,Fu R,Han Y et al.A new method for preparation of direct bonding copper substrate on Al2O3.Mater.Lett.,2007; 61:4 131~4 133
  • 9[40]Kara-Slimane A,Mbongo B,Treheux,D.Adhesion and reactivity in the copper-alumina system:influence of oxygen and silver.J.Adh.Sci.Tech.,1999 ; 13:35~48
  • 10[41]Rhee S K.Wetting of AlN and TiC by liquid Ag and liquid Cu.J.Am.Ceram.Soc.,1970;53:639~641

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