摘要
本文测定了磁控溅射Ｔｉ镀层与金刚石界面反应形成ＴｉＣ层的厚度，镀层与金刚石界面结合强度随热处理时间的变化关系；用ＳＥＭ观察了界面反应形成的ＴｉＣ在金刚石表面上的分布特征；讨论了镀层金刚石界面结合强度与ＴｉＣ显微结构特征的相关性。结果表明，镀层与金刚石界面反应首先在金刚石表面外延生成点状ＴｉＣ，点状ＴｉＣ沿镀层与金刚石界面生长，最后形成连续的ＴｉＣ薄膜，从而达到Ｔｉ镀层与金刚石界面最大结合强度。
The TiC film thickness formed on surface of diamond by interface reaction between Ti coating and diamond is measured,distribution characteristic of the TiC on surface of diamond is observed by SEM.The relation of interface microstructure and bond strength between Ti coating and diamond is discussed.Test results show that interface reaction between Ti coating and diamond commences with the TiC isles.With increasing reaction time,the TiC isles grow along interface between the Ti coating and diamond.The area of the Ti coating chemically bonded to the diamond surface increased.This results in an increase in the interface bond strength.Finally,a continuous the TiC film form on the diamond surface at 880℃ for 1.5h and correspondingly a optimum the interface bond strength is obtained.
出处
《人工晶体学报》
EI
CAS
CSCD
1996年第4期330-334,共5页
Journal of Synthetic Crystals
基金
国家八五重点科技攻关项目
