摘要
采用等离子增强原子层沉积技术在单晶硅基体上成功制备了AlN晶态薄膜,利用椭圆偏振仪、原子力显微镜、小角掠射X射线衍射仪、高分辨透射电子显微镜、X射线光电子能谱仪对样品的生长速率、表面形貌、晶体结构、薄膜成分进行了表征和分析,结果表明,采用等离子增强原子层沉积制备AlN晶态薄膜的最低温度为200C,薄膜表面平整光滑,具有六方纤锌矿结构与(100)择优取向,Al2p与N1S的特征峰分别为74.1eV与397.0eV,薄膜中Al元素与N元素以Al-N键相结合,且成分均匀性良好.
The crystalline AIN thin film was fabricated on Si（100） substrates by plasma-enhanced atomic layer deposition. Its growth rate was illustrated by spectroscopic ellipsometer. And the surface morphology, crystal structure and composition were characterized by atomic force microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Results show that the lowest temperature for deposition of the crystalline A1N thin film is 200 ℃, and the film coverage on the substrate surface is continuous and homogeneous. The film prepared with a homogeneous concentration distribution is polycrystalline with a hexagonal wurtzite structure. High resolution A12p and Nls spectra confirm the presence of/kiN with peaks located at 74.1 eV and 397.0 eV, respectively.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第11期436-441,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:61106060)
中国科学院知识创新工程重大项目(批准号:Y2YF028001)
国家高技术研究发展计划(批准号:2012AA052401)
国家教育部重点项目(批准号:212031)
辽宁省教育厅一般项目(批准号:L2011098)资助的课题~~
关键词
氮化铝
等离子增强原子层沉积
低温生长
晶态薄膜
A1N, plasma-enhanced atomic layer deposition, low-temperature growth, crystalline film
