摘要
采用射频磁控溅射的方法在Si(100)衬底上生长了AlN:Er薄膜。利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)分别对薄膜晶体取向和表面形貌进行了表征,并测量了薄膜的光致发光(PL)光谱。结果表明:不同条件下的AlN:Er薄膜均以(002)晶面取向择优生长,在靶基距5 cm条件下得到了结晶度较好的AlN:Er薄膜;与同条件下生长的AlN薄膜相比, AlN:Er薄膜(002)晶面衍射峰的角度向小角度偏移了0.4°,晶格常数c值增大了0.005 nm。不同条件下生长的AlN:Er薄膜表面大范围内均匀平坦,当靶基距从5 cm增大到6 cm时薄膜生长方式由层状生长转变为颗粒密堆积状生长。AlN:Er薄膜在480, 555和610 nm处均有较强的发光峰,分别来源于Er3+的4F7/2能级向基态4I15/2能级的间接激发跃迁、铝空位(VAl)向价带顶的跃迁和导带底向与氧有关的杂质能级(Io)间的跃迁,并且随着靶基距增大,薄膜在555和610 nm处的发光峰强度减弱。
AlN:Er films grew on the Si(100) substrate by RF magnetron sputtering. The crystal structure and surface morphology of films were characterized by X-ray diffraction(XRD) and scanning electron microscope(SEM). The photoluminescence of films was also examined. The results showed that AlN:Er thin films were grown preferentially with(002) lattice plane orientation under different conditions, and the crystallinity of the films was better than that of AlN thin films grown under the same conditions. The diffraction peak angle of AlN:Er thin films(002) lattice plane shifted to a small angle by 0.4°, and the lattice constant c increased by 0.005 nm compared with AlN, and the lattice expanded. The surface of AlN:Er films grown under different conditions was uniform and flat. When the distance between target and substrate increased from 5 to 6 cm, the growth mode of the films changed from layered growth to dense accumulation. AlN:Er thin films had strong luminescence peaks at 480, 555 and 610 nm, which were derived from the indirect excitation transition from 4F7/2 energy level of Er3+ to 4I15/2 energy level of ground state, the transition from Al vacancy(VAl) to the top of valence band, and the transition from the bottom of conduction band to the oxygen-related impurity energy level(Io), respectively. With the increase of target-to-substrate distance, the intensity of the emission peak decreased at 555 and 610 nm.
作者
沈龙海
吕伟
刘俊
齐东丽
杨久旭
刘彦良
Shen Longhai;Lü Wei;Liu Jun;Qi Dongli;Yang Jiuxu;Liu Yanliang(Shenyang Ligong University,School of Science.Shenyang 110159,China;Shenyang Ugong University,School of Materials Science and Engineering,Shenyang 110159,China)
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2020年第2期172-177,共6页
Chinese Journal of Rare Metals
基金
辽宁省教育厅自然科学基金项目(LG201910)资助。
