摘要
报道一种工作在K波段的压控振荡器的设计和性能。该压控振荡器采用基于pHEMT工艺的有源器件,用紧凑的边缘通孔电磁带隙谐振结构替代传统的谐振电路,实现压控振荡器的小型化。测试结果表明,该电路工作频段为22.9-25.6 GHz,在23.6 GHz的最大输出功率为10.4 dBm,且在24-25.6 GHz频段的输出功率平坦度小于1 dB。在偏离载频1 MHz处测得的压控振荡器相位噪声约为95 dBc/Hz。整体电路面积为17 mm×7.5 mm。
A miniaturized K-band VCO（voltage controlled oscillator） using GaAs pHEMT device is presented.A compact mushroom-type edge-located vias electromagnetic bandgap（ELV-EBG） resonator loaded with a varactor is adopted instead of conventional resonator.The parallel feedback structure VCO is designed to operate from 22.9 GHz to 25.6 GHz.The measured results show that the proposed VCO provides a maximum output power of 10.4 dBm at 23.6 GHz with output power flatness less than 1 dB from 24 GHz to 25.4 GHz.The phase noise of the VCO with ELV-EBG resonator is around 95 dBc/Hz at 1 MHz offset from carrier.The size of this compact VCO is about 17 mm×7.5 mm.
出处
《北京大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2013年第3期383-388,共6页
Acta Scientiarum Naturalium Universitatis Pekinensis
基金
深圳市基础研究计划(JC201005260232A)资助
