摘要
介绍了一种超宽带DC-40GHz的4位单片数字衰减器。该衰减器采用0.25μm砷化镓pHEMT工艺制造。据我所知,这种衰减器是至今国内文献报道中带宽最宽的。它通过采用适当的结构来得到超宽的带宽、低插入损耗以及高衰减精度。该衰减器具有1 dB的衰减步进和15 dB的衰减动态范围,插入损耗在40 GHz时小于5 dB,全衰减态及全频带内的输入输出回波损耗大于12 dB。
This Paper Proposes a Design Method of a Broadband 4-Bit Monolithic Microwave Integrated Circuit（MMIC） Digital Attenuator.It is fabricated with 0.25 μm GaAs pseudomorphic High Electron Mobility Transistors（pHEMT） process.The attenuator＇s DC-40GHz bandwidth is the broadest one yet reported in domestic literatures to the best of my knowledge.Low reference state insertion loss and high attenuation accuracy are also obtained by using appropriate configuration.This attenuator has 1 dB resolution and 15 dB dynamic range.The reference state insertion loss is less than 5 dB at 40 GHz.The input and output return losses are better than 12 dB over all attenuation states and operating frequencies.
出处
《电子器件》
CAS
2010年第2期150-153,共4页
Chinese Journal of Electron Devices
基金
Project supported by the Key Innovation Fund of China Association for Science and Technology(CAST20080503)
