期刊文献+

基于三维元胞模型的刻蚀工艺表面演化方法 被引量:2

A three-dimensional surface evolution algorithm based on cellular model for etching process
原文传递
导出
摘要 为了更好地理解和认识刻蚀机理,并为制造工艺提供优化指导,采用三维元胞模型研究了刻蚀工艺的表面演化过程,并着重探讨了离子对表面演化过程的影响.针对刻蚀离子入射角度的求解问题,提出了一种降维分量拟合方法,将一个三维曲面拟合问题转化为两个二维曲线拟合进行求解,对入射点的表面法向量计算实现了快速求解,与采用最小二乘多项式曲面拟合求解离子入射角度相比,其计算精度和效率都有较大的提高;对用于拟合计算的表面元胞的选取方法进行了改进,提高了拟合的准确度.将这种方法应用到硅刻蚀工艺三维仿真中,其模拟结果与相关实验结果对比,验证了该方法对刻蚀工艺描述的有效性. In order to get a better understanding of etching mechanism and provide optimization guidance for manufacturing process,a three-dimensional(3D)profile evolution simulator based on cellular model is developed to investigate the surface evolution of etching process,and discuss emphatically the effect of ions on the surface evolution.According to the solving problem for angle of ion incidence,a component fitting-based dimension reduction method is presented to convert a 3D surface fitting problem into a twodimensional(2D)curve fitting problem,and achieve fast solution for the surface normal vector of the incident point.Compared with least squares polynomial fitting method,this method improves computational accuracy and efficiency of the ion incidence angle.The improvement on the accuracy of fitting is achieved by improving the selection method of surface cellular for fitting.The fitting method is applied to 3D simulation of silicon etching process,and the simulation results verify the simulated surface by comparing with relevant experimental results.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2013年第10期419-427,共9页 Acta Physica Sinica
基金 国家科技重大专项(批准号:2011ZX2403-002)资助的课题~~
关键词 刻蚀 三维元胞模型 表面演化算法 降维分量拟合 etching three-dimensional cellular model surface evolution algorithm component fitting-based dimension reduction method
  • 相关文献

参考文献4

二级参考文献55

  • 1[1]Beckermann C, Li Q and Tong X 2001 Science and Technology of Advanced Materials. 2 117
  • 2[2]Karma A and Wouter-Jan Rappel 1999 Physical Review E 60 3614
  • 3[3]Juric D and Tryggvason G 1996 Journal of Computational Physics 123 127
  • 4[4]Jocat A and Rappaz M 2002 Acta Materialia 50 1909
  • 5[5]Dilthey U and Pavlik V and Reichel T 1997 Mathematical modeling of weld phenomena 3.rd. The Institute of Materials (The University of Cambridge. UK) 85
  • 6[6]Dilthey U and Pavlik V 1998 Proceedings of the modeling of casting, welding and advanced solidification processes-VIII, (Brigham UK) 589
  • 7[7]Nastac L 1999 Acta Mater. 47 4253
  • 8[8]Zhu M F Kim J M and Hong C P 2001 ISIJ Inter. 41 992
  • 9[9]Lazaro Beltran-Sanchez and Stefanescu Doru M 2003 Metal Mater Trans. 34A 367
  • 10[10]Kurz W, Giovanola B and Trivedi R 1986 Acta Metall. 34 823

共引文献94

同被引文献15

  • 1戴忠玲,毛明,王友年.等离子体刻蚀工艺的物理基础[J].物理,2006,35(8):693-698. 被引量:24
  • 2Chang J P, Mahorowala A P, Sawin H H. Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon [J]. Journal of Vacuum Science & Technology A : Vacuutn, Surfaces, and Films, 1998, 16(1) : 217- 224.
  • 3Chang J P, Sawin H H. Kinetic study of low energy ion-enhanced polysilicon etching using C1, Cl2, and Cl^+ beam scattering [J]. Journal of Vacuum Science & Tech*tology A : Vacuum, SurJaces, and Films, 1997, 15(3) : 610 -615.
  • 4Ertl 0, Selberherr S. Three dimensional level set based Bosch process simulations using ray tracing for flux calculation [J]. Microelectronic Engineerinf4, 2010, 87(1) : 20 - 29.
  • 5Levinson J A, Shaqfeh E S G, Balooch M, et al. Ion-assisted etching and profile development of silicon in molecular and atomic chlorine [J]. Journal of Vacuum Science & Tectznology B, 2000, 18(1): 172-190.
  • 6Saussac J, Margot J, Chaker M. Profile evolution simulator for sputtering and ion-enhanced chemical etching[J]. Jourrzal of Vacuum Science & Tecjnology A, 2009, 27( 1 ) : 130 - 138.
  • 7Kawai H. 3 Dimensional Modeling and Simulation of Surface and Sidewall Roughening During Plasma Etching [D]. Cambridge, MA: Massachusetts Institute of Technology, 2008.
  • 8OnoK, Ohta H, Eriguchi K. Plasma surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study [J]. Ttzin Solid Films, 2010, 518(13): 3461-3468.
  • 9Chiaramonte L, Coiombo R, Fazio G, et at. A numerical method for the efficient atomistic simulation of the plasma etch of nano patterned structures [J]. Compulalional Materials Science, 2012, 54:227 - 235.
  • 10Chang J P, Arnotd J C, Zau G C H, ct al. Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecuhr chlorine [J]. Journal of Vacuum Science & Technology A: Vacuum, SurJaces, and Films, 1997, 15(4): 1853-1863.

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部