摘要
在LaAlO3(111)衬底上,利用分子束外延(MBE)方法,在生长温度为480℃下,制备了高质量纯TiO2及TiO2掺Cu薄膜,并采用拉曼光谱、光电子能谱(XPS)等手段对样品进行表征。XPS分析结果显示Cu原子为+1价,Ti原子为+4价。拉曼光谱发现,在衬底LaAlO3的122.6cm-1拉曼位移峰位处,TiO2掺Cu薄膜对衬底有拉曼增强效应出现,而在纯TiO2薄膜样品中,却未出现拉曼增强现象。当将TiO2掺Cu的薄膜样品在室温环境下放置一段时间后,原有的拉曼增强现象消失。综合实验结果初步分析,其原因与掺入Cu原子的化合价为+1价以及其在薄膜中的存在形式为团簇或是取代Ti原子有关,具体原因仍需进一步验证。
High crystalline pure TiO2 and Cu-doped TiO2 thin films have been fabricated on LaAI（）3 （111） substrates by molecular beam epitaxy （MBE） at 480℃. The samples were characterized by means of Raman spectroscopy and X-ray photoelectron spec troseopy （XPS）. XPS analysis indicated that the valence of Cu is 4-1 and that of Ti is ＋4. At the 122.6 cm 1 Raman character istic peak of LaA103, the fresh Cu-doped TiO2 thin film displays an enhanced Raman spectroscopy, but it does not occur in the pure TiOz. The Raman enhancement disappears when the Cwdoped TiO2 thin film is exposed at room temperature. The most likely reasons may be that the valence of doped Cu is ＋1 and that it exists in the film in cluster or that Cu atoms displace Ti at oms, which needs to be identified in the future.
出处
《中国科技论文》
CAS
北大核心
2013年第3期216-218,共3页
China Sciencepaper
基金
高等学校博士学科点专项科研基金资助项目(20090171110006)
